July 2007

In This Issue

Materials, Lithography Challenges at 45 nm and 32 nm to be discussed at SEMICON West

SEMICON West 2007 Press Conference Webcast

Can't Get from Micro to Nano without MEMS—A Revolution is Coming!

Material Innovations Aim to Cut Development, Environmental Costs

SEMI HTU Students go Green in June

Cycle Time, Productivity Emerge as Key Issues

Taiwan FPD Executives Addresses Growth Challenges
 


A Glimpse into the North American Equipment and Materials Market
by Dan Tracy, Lara Chamness, Christian Gregor Dieseldorff, Ed Hall, SEMI
North American semiconductor equipment and materials market growth will remain healthy and steady, but without much fanfare. However, the activities occurring in the existing and future fabs should keep things exciting and interesting in North America.

Materials, Lithography Challenges at 45 nm and 32 nm to be discussed at SEMICON® West 2007
One of the biggest manufacturing challenges in the industry today is scaling down to 45 nm and beyond. Current technology relies on oxynitride gate dielectrics, but to meet the International Roadmap for Semiconductors (ITRS) requirements for gate performance, it is likely that different materials will have to be identified, qualified and implemented in fabs.

Webcast Advisory—SEMI Press Conference
SEMICON West 2007 Press Conference Webcast

SEMI President and CEO Stanley Myers and SEMI North America President Victoria Hadfield, will review the status of the global semiconductor equipment and materials industry, the new SEMI consensus equipment market forecast, the outlook for semiconductor materials markets and exposition highlight.

Can't Get from Micro to Nano without MEMS—A Revolution is Coming!
by Lubab Sheet, senior director Emerging Technologies, SEMI, San Jose—Article originally appeared in Semiconductor International, 6/15/2007

There are a lot of changes in the MEMS industry, from new consumer applications to increasing fabless and foundry companies to the transition to larger wafer sizes, and that is just in the short term.

Material Innovations Aim to Cut Development, Environmental Costs
by Paula Doe, SEMI, San Jose—Article originally appeared in Semiconductor International, 6/8/2007
The material sector could get some help trimming development and environmental costs with patterned 45 nm test wafers, software to screen materials for nanoscale electrical properties, and environmentally sustainable copper cleaning solutions.

SEMI HTU Students go Green in June
High Tech U, a program to encourage high school students to pursue careers in science and technology, recently expanded their curricula to include advanced clean technologies, including solar and nanotechnology.

Cycle Time, Productivity Emerge as Key Issues
Suppliers and chipmakers are looking to drive Moore's Law by tackling key productivity bottlenecks and improving overall 300 mm fab productivity. Many observers believe that the 300 mm Prime initiative can push out or eliminate the argument for larger wafers by bolstering the use of efficient, high-mix manufacturing operations.

Taiwan FPD Executives Addresses Growth Challenges
At the SEMI FPD Taiwan 2007 show, held July 4–6 in Taipei, Taiwan, a distinguished group of executives discussed issues and opportunities facing the FPD industry both globally and in Taiwan.


Calendar of Events


Asia

SEMICON Taiwan 2007
September 12–14


North America

SEMICON West 2007
July 16–20


Silicon Valley Lunch Forum
August 16


SEMI Pacific Northwest Golf Tournament
September 12


Semiconductor Processing Technology (SPT)
September 18–20


New England Breakfast Forum
September 19




    


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