downloadGroupGroupnoun_press release_995423_000000 copyGroupnoun_Feed_96767_000000Group 19noun_pictures_1817522_000000Member company iconResource item iconStore item iconGroup 19Group 19noun_Photo_2085192_000000 Copynoun_presentation_2096081_000000Group 19Group Copy 7noun_webinar_692730_000000Path

Technical Committee Charter

Electronics Materials

To develop standards required for the transfer of gallium arsenide wafers and compound semiconductor material from supplier to user and for equipment design. These standards exist in support of gallium arsenide and compound semiconductor integrated circuits, microwave devices, and opto-electronic applications.

To develop standards required for the transfer of compound semiconductor and related materials from supplier to user and for equipment design. These standards exist in support of integrated circuits, microwave devices, and opto-electronic applications.

North America Compound Semiconductor/Traceability Task Force

6604: Line Item Revision to SEMI T5-1214, Specification for Alphanumeric Marking of Round Compound Semiconductor Wafers (to include laser mark for 200 mm wafer for silicon carbide)

Europe SiC Material and Wafer Specification Task Force

6615: Revision of SEMI M55-0817, Specification for Polished Monocrystalline Silicon Carbide Wafers (to include 200 mm wafer)

+
Electronics Materials

Industry Participation is Critical

Companies that actively participate in the development process stay current with industry technology trends, and more importantly, influence the direction of the industry. Participation in SEMI International Standards is free to all industry stakeholders. For more information please contact SEMI Standards Staff in your region.

Staff Contacts

Published Standards*

SEMI M9 – Specification for Polished Monocrystalline Gallium Arsenide Wafers

SEMI M14 – Specification for Ion Implantation and Activation Process for Semi-Insulating Gallium Arsenide Single Crystals

SEMI M19 – Specification for Electrical Properties of Bulk Gallium Arsenide Single Crystal Substrates

SEMI M23 – Specification for Polished Monocrystalline Indium Phosphide Wafers

SEMI M36 – Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Gallium Arsenide Wafers

SEMI M54 – Guide for Semi-Insulating (SI) GaAs Material Parameters

SEMI M55 – Specification for Polished Monocrystalline Silicon Carbide Wafers

SEMI M65 – Specification for Sapphire Substrates to Use for Compound Semiconductor Epitaxial Wafers

SEMI M75 – Specification for Polished Monocrystalline Gallium Antimonide Wafers

SEMI M81 – Guide to Defects Found in Monocrystalline Silicon Carbide Substrates

SEMI M83 – Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors

SEMI M86 – Specification for Polished Monocrystalline c-Plane Gallium Nitride Wafers

*This is a partial list of SEMI Safety Standards - see the full and current list.