Gate All Around Transistors - Opportunities Abound

March 23, 2022

Moore’s Law continues to evolve - dramatically changing the Field Effect Transistor (FET).  As FinFETs reach their performance limits, attention is turning to Gate All Around (GAA) architectures based on Horizontal Nanosheet technology. Such a fundamental shift in transistor architecture will create new challenges to processes and materials, presenting opportunities for companies well-positioned for this shift.

In this webinar, SEMI EMG brings experts to explain the technology trends driving the industry adoption of Gate All Around, how the major players are approaching this transition, and the implications this will have on the material supply chain