SiC—Silicon Carbide Material Properties, Fabrication Basics, and Key Applications

SiC—Silicon Carbide Material Properties, Key Applications, and Fabrication Basics: Making the Transition from Silicon

Silicon (Si) power devices have dominated power electronics due to their excellent starting material quality, ease of fabrication, low cost volume production, and proven reliability. Although Si power devices continue to make progress, they are approaching their operational limits primarily due to their relatively low bandgap and critical electric field that result in high conduction and switching losses, and poor high temperature performance.

In this webinar, the favorable material properties of Silicon Carbide (SiC), which allow for highly efficient power devices with reduced form-factor and cooling requirements, will be outlined. High impact application opportunities, where SiC devices are displacing their incumbent Si counterparts, will be reported. Material and device fabrication aspects will be highlighted with an emphasis on the processes that do not carry over from the mature Si manufacturing world and are thus specific to SiC. Fab models will be analyzed, and the vibrant U.S. SiC manufacturing infrastructure (that mirrors that of Si) will be presented.

View Previous Webinar in the SiC Series

• Webinar #1—Silicon Carbide Material Properties, Key Applications, and Fabrication Basics: Making the Transition from Silicon
• Webinar #2—Non-CMOS Compatible SiC Power Device Fabrication in Volume Si Fabs
• Webinar #3—Bidirectional SiC and GaN Switch Technology 
• Webinar #4—Understanding Sic Chip Cost, the Impact of Defects, and the Case of Price Parity With Si at the System Level
• Webinar #5—SiC Edge Termination Technology

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