SiC—Silicon Carbide Webinar #5:

Topic: SiC Edge Termination Technology 

The nine to tenfold increase in critical electric field strength of SiC over Si allows high voltage blocking layers to be fabricated significantly thinner than those of similarly rated Si devices. This reduces device on-state resistance and capacitance, and therefore the associated conduction and switching losses, while maintaining high-voltage breakdown capability. However, lack of a well-designed edge termination structure diminishes the high voltage performance of SiC power devices. Indeed, under reverse bias, planar junctions exhibit breakdown voltages well below the ideal SiC drift layer limit because of electric field crowding at the junction periphery. Consequently, to maximize breakdown voltage, specialized edge termination structures are utilized. In this webinar, common structures that enhance the breakdown voltage of power SiC devices like metal field plates, floating guard rings, multiple-Junction-Termination-Extensions, and beveled edge terminations will be discussed. Emphasis will be placed on optimizing their fabrication by minimizing photolithography levels and processing complexity, while ensuring robust breakdown voltage capability at high wafer yields. 

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