Technical Committee Charter
To develop standards required for the transfer of gallium arsenide wafers and compound semiconductor material from supplier to user and for equipment design. These standards exist in support of gallium arsenide and compound semiconductor integrated circuits, microwave devices, and opto-electronic applications.
To develop standards required for the transfer of compound semiconductor and related materials from supplier to user and for equipment design. These standards exist in support of integrated circuits, microwave devices, and opto-electronic applications.
North America Compound Semiconductor/Traceability Task Force
6604: Line Item Revision to SEMI T5-1214, Specification for Alphanumeric Marking of Round Compound Semiconductor Wafers (to include laser mark for 200 mm wafer for silicon carbide)
Europe SiC Material and Wafer Specification Task Force
6615: Revision of SEMI M55-0817, Specification for Polished Monocrystalline Silicon Carbide Wafers (to include 200 mm wafer)
Industry Participation is Critical
Companies that actively participate in the development process stay current with industry technology trends, and more importantly, influence the direction of the industry. Participation in SEMI International Standards is free to all industry stakeholders. For more information please contact SEMI Standards Staff in your region.
SEMI M9 – Specification for Polished Monocrystalline Gallium Arsenide Wafers
SEMI M14 – Specification for Ion Implantation and Activation Process for Semi-Insulating Gallium Arsenide Single Crystals
SEMI M19 – Specification for Electrical Properties of Bulk Gallium Arsenide Single Crystal Substrates
SEMI M23 – Specification for Polished Monocrystalline Indium Phosphide Wafers
SEMI M36 – Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Gallium Arsenide Wafers
SEMI M54 – Guide for Semi-Insulating (SI) GaAs Material Parameters
SEMI M55 – Specification for Polished Monocrystalline Silicon Carbide Wafers
SEMI M65 – Specification for Sapphire Substrates to Use for Compound Semiconductor Epitaxial Wafers
SEMI M75 – Specification for Polished Monocrystalline Gallium Antimonide Wafers
SEMI M81 – Guide to Defects Found in Monocrystalline Silicon Carbide Substrates
SEMI M83 – Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors
SEMI M86 – Specification for Polished Monocrystalline c-Plane Gallium Nitride Wafers
*This is a partial list of SEMI Safety Standards - see the full and current list.